ماسفت مدل IRF630N بسته 2 عددی

جهت کسب اطلاعات بیشتر درخصوص اندازه قطعه و سایر پارامترها به دیتاشیتقطعه مراجعه نمایید. Specification Product Category: MOSFET Technology: Si Package / Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 200 V Id - Continuous Drain Current: 9 A Rds On - Drain-Source Resistance: 400 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 2 V Qg - Gate Charge: 31 nC Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 75 W Channel Mode: Enhancement Packaging: Tube Configuration: Single Forward Transconductance - Min: 3 S Height: 9.15 mm Length: 10.4 mm Product Type: MOSFET Rise Time: 15 ns Series: IRF630 Subcategory: MOSFETs Transistor Type: 1 N-Channel Type: MOSFET Typical Turn-On Delay Time: 10 ns Width: 4.6 mm